Fabrication of nanomaterial T-gate transistors with charge transfer doping layer
US9748334B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.