Semiconductor device

US9748343B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tatsuo Shimizu · Shinagawa, JP
• Ryosuke Iijima · Setagaya, JP

Key dates

• Filing date: May 9, 2016
• Grant date: Aug 29, 2017
• Expiry date: May 9, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

A semiconductor device of an embodiment includes a SiC layer having a surface inclined with respect to a {000-1} face at an angle of 0° to 10° or a surface a normal line direction of which is inclined with respect to a <000-1> direction at an angle of 80° to 90°, a gate electrode, an insulating layer at least a part of which is provided between the surface and the gate electrode, and a region, at least apart of which is provided between the surface and the insulating layer, including a bond between carbon and carbon.