Transistor

US9748383B2 · kind B2 · utility

Assignee

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

• Yong Hai Hu · Singapore, SG
• Elizabeth Ching Tee Kho · Kuching, MY
• Zheng Liu · Hamamatsu, JP
• Deb Kumar Pal · Sebauh, MY
• Michael Mee Gouh Tiong · Kuching, MY
• Jian-Qiang Liu · Kunshan, CN
• Kia Yaw Kee · Sebauh, MY
• William Lau · Kuching, MY

Key dates

• Filing date: Feb 12, 2009
• Grant date: Aug 29, 2017
• Expiry date: Aug 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.