High-voltage semiconductor device and method of producing the same
US9748408B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2014 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Nov 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor drift device comprises a deep well of a first type of electrical conductivity provided for a drift region in a substrate of semiconductor material, a drain region of the first type of conductivity at the surface of the substrate, a plurality of source regions of the first type of conductivity in shallow wells of the first type of conductivity at the periphery of the deep well of the first type, and a deep well or a plurality of deep wells of an opposite second type of electrical conductivity provided for a plurality of gate regions at the periphery of the deep well of the first type. The gate regions are formed by shallow wells of the second type of electrical conductivity, which are arranged in the deep well of the second type between the shallow wells of the first type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.