Avalanche diode having reduced dark current and method for its manufacture
US9748429B1 · kind B1 · utility
39Cited by
5References
8Claims
0Family size
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Key dates
| Filing date | Sep 30, 2015 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Oct 3, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.