Patent · US Active

Semiconductor light emitting device having convex portion made with different materials

US9748453B2 · kind B2 · utility

0Cited by
40References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 4, 2016
Grant dateAug 29, 2017
Priority date
Expiry dateMay 4, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/872

Abstract

A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.