Elastic wave device and manufacturing method for same
US9748923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2013 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Dec 11, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (φ, θ, ψ) of the LiTaO3 fall within specific ranges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.