Power semiconductor module and method for stabilizing thereof
US9748941B2 · kind B2 · utility
3Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.