IGBT gate drive circuit and method
US9748947B1 · kind B1 · utility
9Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2016 |
| Grant date | Aug 29, 2017 |
| Priority date | — |
| Expiry date | Jul 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/168
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
There are provided methods and systems for operating insulated gate bipolar transistors (IGBTs). For example, there is provided a method that can include detecting a desaturation condition in an IGBT and initiating a turn off procedure when desaturation is detected. The turn off procedure can include holding a gate of the IGBT at at least one voltage level intermediate between a positive rail voltage and a negative rail voltage of an operational range of the IGBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.