Integration of active devices with passive components and MEMS devices
US9751753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Sep 2, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0771
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.