Pressure sensor and pressure sensing method
US9752941B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.