Semiconductor device with U-shaped active portion
US9754978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2014 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Sep 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device (1001) includes: a first transistor (10A) having a first channel length L1 and a first channel width W1; and a second transistor (10B) having a second channel length L2 and a second channel width W2, wherein the first transistor (10A) and the second transistor (10B) include an active layer formed from a common oxide semiconductor film, the first transistor (10A) is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Isd depends on a gate voltage Vg to a resistor state where the drain current Isd does not depend on the gate voltage Vg, and the first channel length L1 is smaller than the second channel length L2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.