Integrated multichannel and single channel device structure and method of making the same

US9755021B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Karen Marie Renaldo · Pasadena, US
• Eric J. Stewart · Silver Spring, US
• Robert S. Howell · Silver Spring, US
• Howell George Henry · Ellicott City, US
• Harlan Carl Cramer · Columbia, US
• Justin Andrew Parke · Ellicott City, US
• Matthew Russell King · Wake Forest, US

Key dates

• Filing date: Jun 17, 2016
• Grant date: Sep 5, 2017
• Expiry date: Jun 17, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0123
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterorstructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.