Transparent compound semiconductor and production method therefor
US9755025B2 · kind B2 · utility
1Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2013 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jan 9, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba1−XLaXSnO3 (0<x<0.1) and has a charge mobility of at least 10 cm2/V·sec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.