Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
US9755061B2 · kind B2 · utility
6Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Jan 29, 2014 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Feb 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.