Semiconductor device and method for manufacturing the same
US9755064B2 · kind B2 · utility
4Cited by
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18Claims
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Key dates
| Filing date | Feb 19, 2016 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of an embodiment includes a SiC layer having a surface, the surface inclined at an angle of 0° to 10° with respect to a {000-1} face or the surface having a normal line direction inclined at an angle of 80° to 90° with respect to a <000-1> direction, a gate electrode, a gate insulating layer provided between the surface and the gate electrode, and a region provided between the surface and the gate insulating layer, a maximum concentration of deuterium (D) in the region being 1×1020 cm−3 or more and a maximum concentration of hydrogen (H) in the region being 1×1019 cm−3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.