Lateral Ge/Si avalanche photodetector

US9755096B2 · kind B2 · utility

Assignee

• Elenion Technologies, LLC · US

Inventors

• Ari Novack · New York, US
• Yang Liu · Tangxia, CN
• Yi Zhang · Pasadena, US

Key dates

• Filing date: Aug 4, 2015
• Grant date: Sep 5, 2017
• Expiry date: Aug 4, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.