Nonvolatile memory device
US9755169B2 · kind B2 · utility
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2References
14Claims
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Assignee
Inventors
Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.