Predistortion in radio frequency transmitter
US9755577B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2015 |
| Grant date | Sep 5, 2017 |
| Priority date | — |
| Expiry date | Dec 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0425
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.