Monolithic CMOS-MEMS microphones and method of manufacturing
US9758370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2201/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods are disclosed for manufacturing a CMOS-MEMS device. A partial protective layer is deposited on a top surface of a layered to cover a logic region. A first partial etch is performed from the bottom side of the layered structure to form a first gap below a MEMS membrane within a MEMS region of the layered structure. A second partial etch is performed from the top side of the layered structure to remove a portion of a sacrificial layer between the MEMS membrane and a MEMS backplate within the MEMS region. The second partial etch releases the MEMS membrane so that it can move in response to pressures. The deposited partial protective layer prevents the second partial etch from etching a portion of the sacrificial layer positioned within the logic region of the layered structure and also prevents the second partial etch from damaging the CMOS logic component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.