Patent · US Active

Open air plasma deposition method

US9758864B2 · kind B2 · utility

0Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 28, 2015
Grant dateSep 12, 2017
Priority date
Expiry dateSep 28, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32889
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.