Thin film transistor substrate, liquid crystal display device having the same and method of manufacturing the same
US9759968B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate includes a gate electrode on a base substrate, an active pattern on the gate electrode, a source electrode on a first end of the active pattern, a drain electrode on a second end of the active pattern, an organic insulation layer on the source electrode and the drain electrode, and a transparent electrode contacting the drain electrode through a contact opening in the organic insulation layer. The drain electrode is spaced from the source electrode. The organic insulation layer includes a first thickness portion around the contact opening and a second thickness portion adjacent to the first thickness portion. The second thickness portion has a thickness greater than that of the first thickness portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.