Pattern trimming compositions and methods
US9760011B1 · kind B1 · utility
1Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photoresist pattern trimming compositions comprise: a polymer that is soluble in a 0.26 normality aqueous tetramethylammonium hydroxide solution; and a solvent system, wherein the solvent system comprises one or more monoether solvents in a combined amount of from 50 to 98 wt % based on the solvent system. The compositions find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.