Apparatus and method for reactive ion etching
US9761458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2011 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Nov 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.