Dicing film and dicing die-bonding film
US9761476B2 · kind B2 · utility
1Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Dec 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/94
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.