Interconnect structure with twin boundaries and method for forming the same
US9761523B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Aug 21, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Aug 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 μm−1 to about 250 μm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.