CMOS-MEMS integration by sequential bonding method
US9761557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Apr 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83951
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods for bonding two wafers are disclosed. In one aspect, a first wafer includes an integrated circuit and the second wafer including a MEMS device. The method comprises depositing a bond pad on a metal on the first wafer and sequentially bonding the first wafer to the second wafer utilizing first and second temperatures. The second wafer is bonded to the bond pad at the first temperature and the bond pad and the metal are bonded at the second temperature. In another aspect, a first wafer including an integrated circuit, the second wafer includes a MEMS device. The method comprises depositing a bond pad on a metal on one of the first wafer and the second wafer and bonding the first wafer to the second wafer at a first temperature via a direct bond interface. The method includes bonding the bond pad to the metal at a second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.