Integrated circuits with lateral bipolar transistors and methods for fabricating the same

US9761664B1 · kind B1 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Wei Gao · Yueqing, CN
• Manjunatha Prabhu · Malta, US
• Chien-Hsin Lee · Malta, US
• Xiangxiang Lu · Singapore, SG
• Vaddagere Nagaraju Vasantha Kumar · Singapore, SG

Key dates

• Filing date: Apr 20, 2016
• Grant date: Sep 12, 2017
• Expiry date: Apr 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/645

Abstract

Integrated circuits with lateral bipolar transistors and methods for fabricating the same are provided. An exemplary integrated circuit includes a semiconductor layer overlying an insulator layer. The semiconductor layer includes a first region having a first thickness and a trench region having a second thickness less than the first thickness. The integrated circuit further includes an isolation region formed over the trench region of the semiconductor layer. Also, the integrated circuit includes a lateral bipolar transistor including a base formed in the trench region of the semiconductor layer, an emitter, and a collector.