Semiconductor device
US9761668B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 6, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | May 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a first conductivity type semiconductor substrate, a second conductivity type semiconductor layer which is formed on the semiconductor substrate so as to be in contact with the semiconductor substrate, a first conductivity type body region which is formed in a front surface portion of the semiconductor layer, a second conductivity type source region which is formed in a front surface portion of the body region, a second conductivity type drain region which is formed apart from the body region, a gate insulating film which is formed in a front surface of the semiconductor layer so as to be in contact with the body region, a thick insulating film which is formed integrally with the gate insulating film so as to cover the semiconductor layer between the gate insulating film and the drain region and a gate electrode which is opposite to the body region via the gate insulating film. The body region includes a first portion in which a boundary with the semiconductor layer is in contact with the gate insulating film and a second portion in which a boundary with the semiconductor layer is in contact with the thick insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.