Amorphous p-type oxide for a semiconductor device
US9761673B2 · kind B2 · utility
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Key dates
| Filing date | Mar 28, 2012 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Nov 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≦x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.