High speed photosensitive devices and associated methods
US9761739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.