Systems and methods for preparing GaN and related materials for micro assembly
US9761754B2 · kind B2 · utility
121Cited by
56References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Jun 18, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.