Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

US9761770B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Johann Eibl · Wien, AT
• Sebastian Taeger · Bad Abbach, DE
• Lutz Höppel · Alteglofsheim, DE
• Karl Engl · Niedergebraching, DE
• Stefanie Rammelsberger · Zeitlarn, DE
• Markus Maute · Alteglofsheim, DE
• Michael Huber · Bad Abbach, DE
• Rainer Hartmann · Regensburg, DE
• Georg Hartung · Seligenstadt, DE

Key dates

• Filing date: Jan 14, 2014
• Grant date: Sep 12, 2017
• Expiry date: Jan 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/852
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.