Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and electronic device comprising the thin film transistor
US9761818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | May 31, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.