Method of manufacturing surface-emitting semiconductor laser element
US9762030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2016 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Aug 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a method of manufacturing a surface-emitting semiconductor laser element including a first process of forming, on a substrate, a semiconductor layer that includes a first semiconductor multilayer reflection mirror, a rough surface formation layer, an active region, a second semiconductor multilayer reflection mirror, and a current confining layer, a second process of forming a mesa structure of the semiconductor layer by etching the semiconductor layer until the rough surface formation layer is exposed, a third process of oxidizing a region including the current confining layer and the rough surface formation layer exposed to the circumference of the mesa structure, a fourth process of forming a rough surface region by performing an acid treatment on a region including the oxidized rough surface formation layer, and a fifth process of forming an insulating film on the region including the rough surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.