High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9762830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2014 |
| Grant date | Sep 12, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/186
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.