Patent · US Active

Conductive nanostructure-based films with improved ESD performance

US9763313B2 · kind B2 · utility

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Key dates

Filing dateApr 24, 2014
Grant dateSep 12, 2017
Priority date
Expiry dateNov 14, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49117
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

Optical stacks containing one or more patterned transparent conductor layers may be damaged by electrostatic discharges that occur during the optical stack manufacturing process. Such damage may result in non-conductive conductors within the patterned transparent conductor layer. An electrostatic discharge protected optical stack may include a substrate layer, a first anti-static layer having a sheet resistance of from about 106 ohms per square (Ω/sq) to about 109 Ω/sq, and a patterned transparent conductor layer. Methods of testing and assessing damage to patterned transparent conductors are provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.