Patent · US Active

Semiconductor detector

US9766354B2 · kind B2 · utility

0Cited by
5References
22Claims
0Family size

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Key dates

Filing dateJan 10, 2014
Grant dateSep 19, 2017
Priority date
Expiry dateJan 10, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01T3/08
  • WIPO fieldEnvironmental technology
  • WIPO sectorChemistry

Abstract

The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.