Mask
US9766537B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 21, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to the field of photolithography technologies. Disclosed is a mask comprising a transparent substrate, the transparent substrate being provided thereon with a semi-transmitting film layer and a light barrier layer to form a non-transmitting region, a semi-transmitting region, and a full transmitting region, the transparent substrate being further provided with a light extinction film layer located at a vicinity of the full transmitting region to weaken an intensity of ultraviolet light transmitting through the vicinity of the full transmitting region. The size of the via formed after an exposure process with the mask is less affected by a change in the thickness of the photoresist surrounding the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.