Patent · US Active

Method of producing a resist structure with undercut sidewall

US9766546B2 · kind B2 · utility

0Cited by

9References

12Claims

0Family size

Assignee

AMS AG · AT

Inventors

Gerhard Eilmsteiner · Eindhoven, NL
Raimund Hoffmann · Steyr, AT

Key dates

Filing date	Jul 25, 2014
Grant date	Sep 19, 2017
Priority date	—
Expiry date	Jul 25, 2034

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/32
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.