GOA circuit based on oxide semiconductor thin film transistor
US9767751B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Feb 2, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2300/0809
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a GOA circuit based on oxide semiconductor thin film transistor. By adding the fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) respectively corresponding to the fourth, fifth, second nodes (S(N), K(N), P(N)) in the pull-down holding module (600). The fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) are controlled with the stage transfer signal of the GOA unit circuit of the former N−1th stage or the scan driving signal of the GOA unit circuit of the former N−1th stage to pull down the voltage levels of the fourth, fifth, second nodes (S(N), K(N), P(N)) under circumstance that the first node (Q(N)) is not completely boosted to rapidly deactivate the pull-down holding module (600) for ensuring the normal boost of the voltage level of the first node (Q(N)). The first node (Q(N)) is guaranteed to be high voltage level in the functioning period, and thus, the normal output of the GOA circuit is ensured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.