Methods of forming CIGS films
US9768015B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes simultaneously evaporating Cu, In, Ga, Se, and Sb onto a substrate. The Se is incident on the substrate at a rate of at least 20 Å/s. The method also includes a selenization step, which includes evaporating Se over the substrate after the precursor step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.