High-chi block copolymers for interconnect structures by directed self-assembly
US9768059B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Apr 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02112
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.