Patent · US Active

High-chi block copolymers for interconnect structures by directed self-assembly

US9768059B1 · kind B1 · utility

7Cited by
9References
32Claims
0Family size

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Key dates

Filing dateApr 7, 2016
Grant dateSep 19, 2017
Priority date
Expiry dateApr 7, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02112
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.