Semiconductor device including three-dimensional crack detection structure
US9768129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jul 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor die, a semiconductor integrated circuit and a three-dimensional crack detection structure. The semiconductor die includes a central region and a peripheral region surrounding the central region. The semiconductor integrated circuit is formed in the central region. The three-dimensional crack detection structure is formed in a ring shape in the peripheral region to surround the central region. The three-dimensional crack detection structure is expanded in a vertical direction. Using the three-dimensional crack detection structure, the crack penetration of various types may be detected thoroughly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.