Electrostatic discharge protection device for high voltage
US9768159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Aug 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
A circuit for protecting against electrostatic discharge events has a semiconductor substrate (200) of first conductivity embedding a first diode in a well (260) of opposite second conductivity, the diode's anode (111) tied to an I/O pin-to-be-protected (101) at a first voltage, and the first diode's cathode (112) connected to the first drain (123) of a first MOS transistor in the substrate. The first MOS transistor's first gate (122) is biased to a second voltage smaller than the first voltage, thereby reducing the first voltage by the amount of the second voltage. In series with the first MOS transistor is a second MOS transistor with its second drain (670) merged with the first source of the first MOS transistor, and its second source (131), together with its second gate (132), tied to ground potential (140).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.