Semiconductor device and method for fabricating the same
US9768163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.