Laterally diffused metal oxide semiconductor device and manufacturing method therefor
US9768292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a manufacturing method for a laterally diffused metal oxide semiconductor device, comprising the following steps: growing an oxide layer on a substrate of a wafer (S210); coating a photoresist on the surface of the wafer (S220); performing photoetching by using a first photoetching mask, and exposing a first implantation window after development (S230); performing ion implantation via the first implantation window to form a drift region in the substrate (S240); coating one layer of photoresist on the surface of the wafer again after removing the photoresist (S250); performing photoetching by using the photoetching mask of the oxide layer of the drift region (S260); and etching the oxide layer to form the oxide layer of the drift region (S270). Further provided is a laterally diffused metal oxide semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.