Thin film transistor, organic light-emitting diode display including the same, and manufacturing method thereof
US9768310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | May 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A TFT, OLED display including the same, and manufacturing method thereof are disclosed. In one aspect, the TFT includes a first gate electrode formed over a substrate and a first insulating layer formed over the substrate and the first gate electrode. A semiconductor layer is formed over the first insulating layer, the semiconductor layer at least partially overlapping the first gate electrode. A second insulating layer is formed over the first insulating layer and the semiconductor layer, the first and second insulating layers having a pair of connection holes formed therethrough. A second gate electrode is electrically connected to the first gate electrode via the connection holes, the connection holes respectively exposing portions of the first gate electrode. Source and drain electrodes are formed over a third insulating layer and electrically connected to the semiconductor layer via the contact holes, the contact holes respectively exposing portions of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.