Semiconductor device, manufacturing method of semiconductor device, and electronic device
US9768317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Dec 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/504
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.