Etching techniques for semiconductor devices
US9768327B2 · kind B2 · utility
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3References
20Claims
0Family size
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Key dates
| Filing date | Jun 25, 2015 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Jun 25, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.